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Epitaxial graphene perfection vs. SiC substrate quality |
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| Authors: | Dominika Teklinska Kinga Kosciewicz Kacper Grodecki Mateusz Tokarczyk Grzegorz Kowalski Wlodzimierz Strupinski Andrzej Olszyna Jacek Baranowski |
| Affiliation: | (1) Electrical Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, 110 8th Street, JEC 6031, 12180 Troy, NY, USA |
| Abstract: | Polytype instability of SiC epitaxial films was the main focus of attention in the experiment performed since this factor has a decisive influence on graphene growth, which was the second stage of the experiment. Layers deposited in various initial C/Si ratios were analyzed. |
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