| 硅基混合集成技术的研究进展 |
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| 引用本文： | 李显尧,袁韬努,邵士茜,施祖军,汪毅,俞育德,余金中. 硅基混合集成技术的研究进展[J]. 物理, 2011, 40(1) |
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| 作者姓名： | 李显尧 袁韬努 邵士茜 施祖军 汪毅 俞育德 余金中 |
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| 作者单位： | 1. 华中科技大学光电子科学与工程学院,武汉,430074;武汉光电国家实验室(筹),武汉,430074
2. 中国科学院半导体研究所集成光电子学国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金(批准号:60806016)资助项目 |
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| 摘 要： | 硅基光电子集成技术(PICs)为高速宽带光互连和光通信的发展提供了一种低成本的有效方案,受到人们的高度重视.目前将III-V族和锗等半导体化合物集成到硅衬底的方法主要分为两类:异质结外延生长和异质材料的键合.低温下晶片键合的方法克服了异质结外延生长中的生长温度高、晶格失配和材料热膨胀系数非共容性的缺点,为大规模的异质(不同半导体材料)集成提供了可能.文章综述了近几年来一些常用的键合方法,并对低温键合方法的发展动向做了展望.
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| 关 键 词： | 半导体物理学 硅基键合技术 综述 混合集成 |
Silicon hybrid integration |
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| LI Xian-Yao,YUAN Tao-Nu,SHAO Shi-Qian,SHI Zu-Jun,WANG Yi,YU Yu-De,YU Jin-Zhong. Silicon hybrid integration[J]. Physics, 2011, 40(1) |
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| Authors: | LI Xian-Yao YUAN Tao-Nu SHAO Shi-Qian SHI Zu-Jun WANG Yi YU Yu-De YU Jin-Zhong |
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| Affiliation: | LI Xian-Yao1,2,YUAN Tao-Nu1,2 SHAO Shi-Qian1,2SHI Zu-Jun1,2 WANG Yi1,2 YU Yu-De3 YU Jin-Zhong3(1 College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China)(2 Wuhan National Laboratory for Optoelectronics,China)(3 State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | Recently,much attention has concentrated on silicon based photonic integrated circuits(PICs),which provide a cost-effective solution for high speed,wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods,i.e.,heteroepitaxy and bonding.Low-temperature wafer bonding which can overcome the high growth temperature,lattice mismatch,and incompatibility of thermal expansi... |
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| Keywords: | semiconductor physics silicon-based bonding technology summary hybrid integration |
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