Sputtering induced recombination of nitrogen isotopes on tungsten |
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Authors: | Fumihiro Honda Yasuo Fukuda JWayne Rabalais |
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Institution: | Department of Chemistry, University of Houston, Houston, Texas 77004, USA |
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Abstract: | Adsorbed isotopic mixtures of 14N2 and 15N2 at low coverages on polycrystalline tungsten have been used as model systems for studying sputtering induced recombination during secondary ion mass spectrometry (SIMS). Earlier studies have shown that N2 is completely dissociated on a W surface at low coverage. Thermal desorption spectroscopy (TDS) has been employed here to confirm this fact; our results show that complete isotopic mixing occurs. Adsorbed nitrogen can be sputtered as both atoms and molecules and sputtering induced recombination of adsorbate atoms increases as primary ion energy increases. Sputtering induced recombination is detected through isotopic mixing in SIMS. The data show that the dominant mechanism for sputtering of dimers (N2) is not direct emission from the surface but rather a sputtering induced recombination mechanism. |
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