The study of hydrogenation effect for the deep levels in GaN epilayers |
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| Affiliation: | 1. INAOE, Departamento de Electrónica, Apartado 51, Puebla, 72000, Mexico;2. Universidad del Valle de Puebla, Calle 3 Sur 5759, Col. El Cerrito, Puebla, 72440, México;3. Centro de Investigación en Materiales Avanzados S.C., Unidad Monterrey-PIIT, Apodaca, N.L, 66600, Mexico;4. Centro de Investigaciones en Óptica, A. C., Lomas del Bosque 115, Col. Lomas del Campestre León, GTO, 37150, Mexico;1. University of Calgary, Canada;2. Nexen Energy ULC, Canada;1. UGC-DAE Consortium for Scientific Research, Kolkata Centre, Sector III, LB-8, Salt Lake, Kolkata, 700 098, India;2. Department of Solid State Physics, Indian Association for the Cultivation of Science, 2 A & B Raja S. C. Mullick Road, Jadavpur, Kolkata, 700 032, India;3. Université Grenoble Alpes, INAC-MEM, F-38000, Grenoble, France;4. CEA-Grenoble, INAC-MEM, F-38000, Grenoble, France;1. Universidad Tecnológica de Pereira, Grupo Plasma Láser y Aplicaciones, Colombia;2. Functional Nanoscale Devices for Energy Recovery Group, Institute of Microelectronics of Madrid, Spain;3. Tribology, Powder Metallurgy and Processing of Solid Recycled Research Group, Universidad del Valle, Cali, Colombia;4. Universidad De la Amazonia, Colombia;5. Laboratorio de Materiales Cerámicos y Vítreos, Universidad Nacional de Colombia, Sede Medellín, A.A. 568, Medellín, Colombia;1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha, Hunan 410083, PR China;2. Beijing Spacecrafts, Beijing 100190, PR China;1. L.N. Gumilyov Eurasian National University, Astana, Kazakhstan;2. The Institute of Nuclear Physics of Republic of Kazakhstan, Astana, Kazakhstan;3. Ural Federal University named after the First President of Russia B.N. Yeltsin, Yekaterinburg, Russia;4. School of Engineering, Nazarbayev University, Astana, Kazakhstan |
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| Abstract: | After the undoped GaN epilayers were grown on (0 0 0 1) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE), the photoconductivity (PC) and thermally stimulated current (TSC) measurements have been carried out so as to investigate the hydrogenation and annealing effect of the deep levels. These results indicate that the values of concentrations of the deep levels in the GaN epilayers decrease by the passivation of hydrogenation in both PC and TSC measurements. After hydrogenation, the PC intensity for the hydrogenated GaN epilayer decreased remarkably in comparison with that for the as-grown sample and the TSC peak near 150 K drastically decreased.In the case of PC measurement, the PC intensity for the hydrogenated and annealed GaN epilayer was approximately half that for the hydrogenated only GaN epilayer when the hydrogenated epilayer was annealed at 700°C. This result reveals that the passivation of the deep levels due to the hydrogenation is still effective at the annealing temperature of 700°C. In the case of TSC measurement, the deep levels changed slightly in comparison with that of hydrogenated GaN epilayer when the hydrogenated GaN epilayer was annealed at 600°C for 30 s. This result also shows that the passivation of deep levels due to the hydrogenation is still effective at the annealing temperature of 600°C for 30 s. In considering the above circumstances, these TSC results are in reasonable agreement with the PC results. |
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