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Quantum transport in molecular nanowires transistors
Institution:1. Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart, Germany;2. IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA;3. School of Physics and Condensed Matter Research Institute, Seoul National University, South Korea;1. Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 182 21 Prague, Czech Republic;2. Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic;1. Department of Medicine and Health Sciences, University of Molise, Campobasso, Italy;2. Gastrointestinal Bacteria Reference Unit, Public Health England, London, UK;3. Department of Health Sciences, University of Milan, Milan, Italy;1. Department of Psychiatry, University of Wisconsin, Madison, Wisconsin;2. Neuroscience Training Program (NHK, RK, PHR, DPMT, MEE), University of Wisconsin, Madison, Wisconsin;3. Department of Medical Physics, University of Wisconsin, Madison, Wisconsin;4. Department of Biomedical Engineering (WFB);5. Department of Radiology (WFB, EKB) University of Wisconsin; Madison, Wisconsin;6. Wisconsin National Primate Research Center (NHK, MEE); Madison, Wisconsin;7. TherVoyant, Inc., Madison, Wisconsin;8. Departments of Neurobiology and Anatomy and Psychiatry (JLF), University of Rochester Medical Center, Rochester, New York
Abstract:Nanotube-based field effect transistors can be prepared by laying carbon nanotubes over electrolithographically deposited gold electrodes on silicon chips. These devices can be used to study the physical properties of the nanotubes and to investigate the electrical behaviour of the contacts between the electrodes and the tubes. From the experience with these devices technologies of chemical self-assembly can be developed which will allow for integration densities higher than achievable by purely lithographic means.
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