| Affiliation: | 1. School of Electronics and Information and Institute of Natural Sciences, Kyung Hee University, Suwon 449-701, Republic of Korea;2. Department of Physics, Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea;1. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea;2. High Temperature Energy Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea;3. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;1. Politecnico di Torino, DISAT, Istituto di Ingegneria e Fisica dei Materiali, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy;2. Department of Electronics and Communications Engineering, Tampere University of Technology, Korkeakoulunkatu 3, FI-33720 Tampere, Finland;3. BioMediTech, Tampere, Finland;4. Process Chemistry Centre, Åbo Akademi University, Biskopsgatan 8, FI-20500 Turku, Finland;5. nLIGHT Corporation, Sorronrinne 9, FI-08500 Lohja, Finland;6. CNRS, Université de Bordeaux, ISM, 351 Cours de la Libération, F-33405 Talence, France;7. CNRS, Université de Bordeaux, ICMCB, 87 Avenue du Dr Schweitzer, F-33608 Pessac, France;1. School of Physical Science and Technology, Guangxi University, 100 East Daxue Road, Nanning, 530004, Guangxi, PR China;2. School of Science, Tianjin University, Tianjin, 300072, China;1. Divisions of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita 565-0871, Osaka, Japan;2. ESICB, Kyoto University, Katsura, Kyoto 615-8520, Japan;3. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1, Mihogaoka, Ibaraki 567-0047, Osaka, Japan |
