Observation of exciton localization in PbSrSe thin films grown by molecular beam epitaxy

Detailed temperature and excitation-intensity dependence of radiative recombination characteristics in PbSrSe thin films grown by molecular beam epitaxy has investigated. For the first time, localized excitonic structure due to the alloy disorder has been observed at low temperature, and is gradually delocalized as wave-vector-nonconserving band-to-band transitions at high temperature in PbSrSe with low Sr composition. Furthermore, we are able to observe the evolution of the exciton localization, due to the strong alloy fluctuations and lattice distortions, into either free or trapped (strongly localized) excitons at low temperature by studying a PbSrSe thin film with the Sr composition as high as 0.276. The lattice deformation has been shown to play a key role in the composition-dependent excitonic peak broadening in PbSrSe at low temperature. This gives clear evidence for the observation of excitonic effects in lead salts due to their low carrier concentration and enhanced exciton binding energy. The results are discussed in the framework of theories taking into account the carrier migration and exciton trapping due to the alloy fluctuations and lattice vibrations . PACS 78.55.Hx; 78.66.Li