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微晶硅薄膜的制备及结构和稳定性研究
引用本文:张晓丹,赵颖,高艳涛,朱锋,魏长春,孙建,耿新华,熊绍珍.微晶硅薄膜的制备及结构和稳定性研究[J].物理学报,2005,54(8):3910-3914.
作者姓名:张晓丹  赵颖  高艳涛  朱锋  魏长春  孙建  耿新华  熊绍珍
作者单位:南开大学光电子薄膜器件与技术研究所,天津 300071;南开大学光电子薄膜器件与技术天津市重点实验室,天津 300071;南开大学光电信息技术科学教育部重点实验室,天津 300071
基金项目:国家重点基础研究发展规划 (批准号:G2000028202,G2000028203)、教育部国际科技合作项目(批准号:2002DFG00051)和国家高技术研究发展计划 (批准号:2002AA303261) 资助的课题.
摘    要:采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明:随衬底温度的升高,材料 中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含 量随衬底温度的升高而增加(在1019cm-3量级);与高衬底温度相 比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好. 关键词: 甚高频等离子体增强化学气相沉积 微晶硅薄膜 傅里叶变换红外吸收

关 键 词:甚高频等离子体增强化学气相沉积  微晶硅薄膜  傅里叶变换红外吸收
文章编号:1000-3290/2005/54(08)/3910-05
收稿时间:2004-10-21

Fabrication of microcrystalline silicon thin film and the study of its microstructure and stability
Zhang Xiao-Dan,Zhao Ying,GAO Yan-tao,Zhu Feng,WEI Chang-chun,Sun Jian,GENG Xin-hua,XIONG Shao-zhen.Fabrication of microcrystalline silicon thin film and the study of its microstructure and stability[J].Acta Physica Sinica,2005,54(8):3910-3914.
Authors:Zhang Xiao-Dan  Zhao Ying  GAO Yan-tao  Zhu Feng  WEI Chang-chun  Sun Jian  GENG Xin-hua  XIONG Shao-zhen
Abstract:A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperat ures (Ts). Analysis of materials structure was conducted using Fourie r tra nsform infrared (FTIR). The results showed that hydrogen content of the samples decreased with the increase of Ts. The results of FTIR and secondary ion m ass spectra indicated that the oxygen content of the samples increased with the increase of Ts. Compared with those at higher Ts, samples prepared at low Ts easily adsorbed oxygen, and showed bad stability.
Keywords:very high frequency plasma-enhanced chemical vapor deposition  microcrystalline silicon thin films  Fourier transform infrared
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