Nitrogen doping-mediated room-temperature ferromagnetism in insulating Co-doped SnO2 films |
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| Authors: | XF Liu SL Yang RH Yu |
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| Institution: | a State Key Lab of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, People's Republic of China |
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| Abstract: | Co-doped SnO2 films codoped with nitrogen (N) have been prepared by magnetron sputtering to investigate the effect of p-type defects on magnetic properties. The incorporation of N modifies the preferential growth orientation of the films. Multiple characterization techniques reveal that the incorporated Co2+ and N3− ions substitute for Sn4+ and O2− sites in SnO2 lattice, respectively. As N concentration increases, the band gap of the films decreases because of the formation of Sn-N bond. Room-temperature ferromagnetism is observed in (Co, N)-codoped SnO2 films, and the saturated magnetic moment is sensitive to the incorporated N concentration. The variations in the magnetic properties as a function of N concentration are discussed on the basis of bound magnetic polaron model. |
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| Keywords: | Diluted magnetic semiconductor p-Type doping Room-temperature ferromagnetism |
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