|
|||||
|
|
Low temperature fabrication of 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method |
|
| Authors: | Yousuke Fukaya Takashi Yanase Yasushi Kubota Shigeki Imai Taketoshi Matsumoto Hikaru Kobayashi |
| Institution: | a Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan b Mobile-LCD Group, Sharp Corporation, 1177-1, Gosana, Taki-cho, Mie 519-2192, Japan c Corporate Research and Development Group, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan d CREST, Japan Science and Technology Organization, Japan |
| Abstract: | We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5-10 nm) SiO2/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68 wt% nitric acid aqueous solutions at 120 °C with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO2 layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28 × 1022 atoms/cm2, and it increases by POA at 400 °C in wet-oxygen (2.32 × 1022 atoms/cm2) or dry-oxygen (2.30 × 1022 atoms/cm2). The leakage current density is considerably low (e.g., 10−5 A/cm2 at 8 MV/cm) and it is greatly decreased (10−8 A/cm2 at 8 MV/cm) by POA at 400 °C in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO2 layer, and decreases the density of oxide fixed positive charges. |
| Keywords: | 81 60 Cp 73 40 Qv 85 40 Hp 73 61 Ng |
| 本文献已被 ScienceDirect 等数据库收录！ | |