|
|||||
|
|
On the influence of the surface roughness onto the ultrathin SiO2/Si structure properties |
|
| Authors: | Stanislav Jure?ka Hikaru Kobayashi Taketoshi Matsumoto Ferdinand Chovanec |
| Institution: | a DEF FEE University of ?ilina, Nálepku 1390, 03101 Liptovský Mikuláš, Slovakia b ISIR, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan c Mathematical Institute SAS, Štefánikova 49, 814 73 Bratislava, Slovakia d DS AAF of Gen. M.R. Štefánik, Demänová 393, 03101 Liptovský Mikuláš, Slovakia e Institute of Physics SAS, Dúbravská cesta 9, 84511 Bratislava, Slovakia |
| Abstract: | The surface roughness of the semiconductor substrate substantially influences properties of the whole semiconductor/oxide structure. SiO2/Si structures were prepared by using low temperature nitric acid oxidation of silicon (NAOS) method and then the whole structure was passivated by the cyanidization procedure. The influence of the surface morphology of the silicon substrate onto the electrical properties of ultrathin NAOS SiO2 layer was investigated. Surface height function properties were studied by the AFM method and electrical properties were studied by the STM method. The complexity of analyzed surface structure was sensitive to the oxidation and passivation steps. For describing changes in the oxide layer structure, several fractal measures in an analysis of the STM images were used. This fractal geometry approach enables quantifying the fine spatial changes in the tunneling current spectra. |
| Keywords: | 68 35 bg 68 35 Ct 68 37 Ef 68 37 Ps |
| 本文献已被 ScienceDirect 等数据库收录！ | |