Low operating temperature of oxygen gas sensor based on undoped and Cr-doped ZnO films |
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Authors: | N. Al-Hardan M.J. Abdullah A. Abdul Aziz H. Ahmad |
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Affiliation: | School of Physics, Universiti Sains Malaysia (USM), 11800 Penang, Malaysia |
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Abstract: | Undoped and doped ZnO with 1 at.% (atomic percentage) chromium (Cr) was synthesized by RF reactive co-sputtering for oxygen gas sensing applications. The prepared films showed a highly c-oriented phase with a dominant (0 0 2) peak at a Bragg angle of around 34.2°. The operating temperature of the prepared ZnO sensor was around 350 °C and shifted to around 250 °C for the doped ZnO sensor which is lower than that of previously reported work. The sensitivity of the sensor toward oxygen gas was enhanced by doping ZnO with 1 at.% Cr. Good stability and repeatability of the sensor were demonstrated when tested under different concentration of oxygen atmosphere. |
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Keywords: | Gas sensor Zinc oxide Oxygen sensors |
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