Nanopore formation on low-doped p-type silicon under illumination |
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Authors: | N Chiboub J-N Chazalviel S Moulay |
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Institution: | a UDTS, 02 Bd. Frantz Fanon, B.P. 140, Alger-7 Merveilles, 16200 Algiers, Algeria b Physique de la Matière Condensée, École Polytechnique, CNRS, 91128 Palaiseau, France c Université Saad Dahleby, B.P. 270, Route de Soumaa, Blida, Algeria |
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Abstract: | Porous silicon layers were elaborated by anodization of highly resistive p-type silicon in HF/ethylene glycol solution under front side illumination, as a function of etching time, HF concentration and illumination intensity. The porous layer morphology was investigated by scanning electron microscopy (SEM). The illumination during anodization was provided by a tungsten lamp or lasers of different wavelengths. Under anodization, a microporous layer is formed up to a critical thickness above which macropores appear. Under illumination, the instability limiting the growth of the microporous layer occurs at a critical thickness much larger than in the dark. This critical thickness depends on HF concentration, illumination wavelength and intensity. These non-trivial dependencies are rationalized in a model in which photochemical etching in the electrochemically formed porous layer plays the central role. |
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Keywords: | Porous silicon Photoelectrochemical SEM Resisitive silicon Illumination |
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