Structural and electrical characterization of the nickel silicide films formed at 850 °C by rapid thermal annealing of the Ni/Si(1 0 0) films

Nickel di-silicide formation induced by RTA process at 850 °C for 60 s in the Ni/Si(1 0 0) systems are investigated as a function of the initial Ni film thickness of 7-89 nm using XRD, RBS, SEM, X-SEM and AFM. Based on the XRD and RBS data, in the silicide films of 400-105 nm, NiSi and NiSi₂ silicide phases co-exist, indicating that Ni overlayer is completely transformed to NiSi and NiSi₂ silicide phases. SEM reveals that these films consist of large grains for co-existence of NiSi₂ and NiSi phases, separated from one another by holes, reflecting that NiSi₂ grows as islands in NiSi matrix. These films have low sheet resistance, ranging from 1.89 to 5.44 Ω/□ and good thermal stability. For thicknesses ≤ 80 nm RBS yields more Si-rich silicide phases compared to thicker films, whereas SEM reveals that Si-enriched silicide islands with visible holes grow in Si matrix. As the film thickness decreases from 400 to 35 nm, AFM reveals a ridge-like structure showing a general trend of decreasing average diameter and mean roughness values, while sheet resistance measurements exhibit a dramatic increase ranging from 1.89 to 53.73 Ω/□. This dramatic sheet resistance increase is generated by substantial grain boundary grooving, followed by island formation, resulting in a significant phase transformation from NiSi₂-rich to Si-rich silicide phases.