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Dependence of Curie temperature on surface strain in InMnAs epitaxial structures |
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| Authors: | J Novák I Vávra S Hasenöhrl M Reiffers |
| Institution: | a Institute of Electrical Engineering, Slovak Academy of Sciences, 841 04 Bratislava, Slovakia b Institute of Experimental Physics SAS, Košice, Slovakia c Institute of Nanoscience of Aragon, University of Zaragoza, Spain |
| Abstract: | Pairs of self-assembled InMnAs quantum dot structures and reference epitaxial layers (0 < x < 0.13) were prepared on GaAs substrates by low-pressure metal organic vapour phase epitaxy. Magnetic moment measurements indicated that reference epitaxial layer had a Curie temperature of 343 K independent on the composition. On the other hand, the quantum dots prepared under Stranski-Krastanov growth mode from the identical gas phase composition showed a lower value of Curie temperature. This value varied from 41 to 235 K in relation to the material composition. Moiré fringes at transmission electron microscopy plan view were used for characterization of strain in InMnAs quantum dot structures. |
| Keywords: | 75 75 Cd 78 67 Hc 81 05 Ea 81 15 Gh |
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