The impact of annealing temperature and time on the electrical performance of Ti/Pt thin films

In this study, we focus on the influence of annealing time t_PDA (i.e. 30 min and 630 min) on the room-temperature resistivity of electron-beam-evaporated titanium/platinum thin films when exposed to thermal loads up to temperatures T_PDA of 700 °C. The titanium has a fixed thickness of 5 nm and serves as an adhesion layer. The thickness d_f,Pt of the platinum top layer is varied between 21 and 97 nm. Up to annealing temperatures of 450 °C, the film resistivity of the bi-layer system is linearly correlated with the reciprocal platinum film thickness independent of t_PDA, as expected from the size effect. At t_PDA = 30 min, the change in intrinsic film stress dominates the electrical behavior in this annealing regime, predominantly at large d_f,Pt values. Compared to t_PDA = 630 min, however, the increase in resistivity especially at low platinum film thickness is substantially larger demonstrating that titanium starts to diffuse at these long annealing times even at moderate temperatures. At T_PDA = 600 °C, the diffusion of titanium into the top layer leads to an enhanced increase in film resistivity ρ_f, especially at low platinum thicknesses and low annealing times, as the mean penetration depth of diffused titanium is under these conditions in order of d_f,Pt. Above T_PDA = 600 °C, ρ_f is slightly increased at t_PDA = 30 min. At t_PDA = 630 min, however, the film resistivity is decreased at d_f,Pt < 58 nm. This is attributed to grain growth and re-crystallization effects. Furthermore, the mean penetration depths of titanium substantially exceed d_f,Pt resulting predominantly in Ti_xO_y formation on the top film surface and hence, having low impact on ρ_f.