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Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy |
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| Authors: | D. Herná ndez-Maldonado,M. Herrera,P. Alonso-Gonzá lez,L. Gonzá lez,P.L. Galindo |
| Affiliation: | a Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain b Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid, Spain c Departamento de Lenguajes y Sistemas Informáticos, CASEM, Universidad de Cádiz, Campus Río San Pedro, s/n, 11510 Puerto Real, Cádiz, Spain |
| Abstract: | The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition. |
| Keywords: | 68.37.Lp 81.05.Ea 81.15.Hi |
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