Molecular gated transistors: Role of self-assembled monolayers |
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Authors: | O. Shaya B. Khamaisi Y. Usherenko A. Doron Y. Rosenwaks |
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Affiliation: | a School of Electrical Engineering, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69978, Israel b Intel Research Israel, Intel Electronics, Jerusalem 91031, Israel |
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Abstract: | In order to understand the biosensing mechanism of field-effect based biosensors and optimize their performance, the effect of each of its molecular building block must be understood. In this work the gating effect of self-assembled linker molecules on field-effect transistor was studied in detail. We have combined Kelvin probe force microscopy, current-voltage measurements, capacitance-voltage measurements, equivalent circuit modeling and device simulations in order to trace the mechanism of silicon-on-insulator biological field-effect transistors. The measurements were conducted on the widely used linker molecules (3-aminopropyl)-trimethoxysilane (APTMS) and 11-aminoundecyl-triethoxysilane (AUTES), which were self-assembled on ozone activated silicon oxide surface covering the transistor channel. In a dry environment, the work function of the modified silicon oxide decreased by more than 1.5 eV, and the transistor threshold voltage increased by about 30 V following the self-assembly. A detailed analysis indicates that these changes are due to negative induced charges on the top dielectric layer, and an effective dipole due to the polar monolayer. However, the self-assembly did not change the silicon flat-band voltage when in contact with an electrolyte. This is attributed to electrostatic screening by the electrolyte. |
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Keywords: | 73.61.-r |
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