Growth of SiO2 on InP substrate by liquid phase deposition |
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| Authors: | Po Hsun Lei Chyi Da Yang |
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| Affiliation: | a Institute of Electro-Optical and Materials Science, National Formosa University, 64 Wen-Hwa Rd, Hu-Wei, Yun-Lin 623, Taiwan, ROC
b Department of Microelectronic Engineering, National Kaohsiung Marine University, Kaohsiung 811, Taiwan, ROC |
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| Abstract: | We have grown silicon dioxide (SiO2) on indium phosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 M boric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 Å/h and 1.495 under the constant growth temperature of 40 °C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH− ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution. |
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| Keywords: | Liquid phase deposition (LPD) Indium phosphorous (InP) Hydrochloric acid (HCl) Silicon dioxide (SiO2) |
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