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Electron impinging on metallic thin film targets |
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| Authors: | Z Rouabah N Bouarissa C Champion |
| Institution: | a Laboratoire de Physique Moléculaire et des Collisions, ICPMB (FR CNRS 2843), Institut de Physique, Université Paul Verlaine-Metz, Metz Cedex 3, France b Laboratoire Matériaux et Systèmes Electroniques, Centre Universitaire de Bordj-Bou-Arreridj, El-Anasser, 34265 Bordj-Bou-Arreridj, Algeria c Department of Physics, Faculty of Science, King Khalid University, Abha, P.O.Box 9004, Saudi Arabia |
| Abstract: | Based on the Vicanek and Urbassek theory M. Vicanek, H.M. Urbassek, Phys. Rev. B 44 (1991) 7234] combined to a home-made Monte Carlo simulation, the present work deals with backscattering coefficients, mean penetration depths and stopping profiles for 1-4 keV electrons normally incident impinging on Al and Cu thin film targets. The cross-sections used to describe the electron transport are calculated via the appropriate analytical expression given by Jablonski A. Jablonski, Phys. Rev. B 58 (1998) 16470] whose new improved version has been recently given Z. Rouabah, N. Bouarissa, C. Champion, N. Bouaouadja, Appl. Surf. Sci. 255 (2009) 6217]. The behavior of the backscattering coefficient, mean penetration depth and stopping profiles versus the metallic film thickness at the nanometric scale and beyond is here analyzed and discussed. |
| Keywords: | 68 37 &minus d 68 37 Nq 02 70 Uu |
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