Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications |
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Authors: | E.V. Kunitsyna,T.V. L&rsquo vova,M.S. Dunaevskii,Ya.V. Terent&rsquo ev,A.N. Semenov,V.A. Solov&rsquo ev,B.Ya. Meltser,S.V. Ivanov,Yu.P. Yakovlev |
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Affiliation: | Ioffe Physical-Technical Institute RAS, 26 Politekhnicheskaya st., 194021 St Petersburg, Russia |
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Abstract: | A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na2S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1 0 0) leads to the formation of the clean flat (1 0 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1 0 0) surfaces decreases by 20%, whereas for the non-passivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics. |
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Keywords: | 81.05.Ea 81.65.Rv 81.65.Cf 78.55.Cr 68.37.Ps 73.40.Kp |
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