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Annealing effect on CdS/SnO2 films grown by chemical bath deposition |
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| Authors: | H. Metin S. Erat S. Durmu? |
| Affiliation: | a Department of Physics, Mersin University, Ciftlikkoy, Mersin 33343, Turkey b Laboratory for High Performance Ceramics, EMPA-Swiss Federal Laboratories for Materials Testing & Research, CH-8600 Dübendorf, Switzerland c Department of Materials, Nonmetallic Inorganic Materials, ETH Zürich-Swiss Federal Institute of Technology, CH-8053 Zürich, Switzerland d Department of Physics, Erciyes University, Kayseri, Turkey |
| Abstract: | The extensive investigation of the annealing effect in nitrogen atmosphere on the structural optical and electrical properties of chemically deposited CdS films on SnO2 has been performed. The as-deposited film shows 2.45 eV band gap (Eg) and decreases with increasing annealing temperature. The film annealed at 623 K having pure hexagonal phase (a = 4.14 Å, c = 6.71 Å for [1 0 0] plane) and Eg = 2.36 eV shows 10 times higher conductivity for all temperature range, and shows two different activation energies Ea = 0.114 eV and Ea = 0.033 eV for the temperature range 395 K ≤ T ≤ 515 K and 515 K ≤ T ≤ 585 K, respectively. The structural parameters such as dislocation density, strain and optical parameters such as absorption and extinction coefficient are calculated and compared for all the films. |
| Keywords: | CdS SnO2 Optical properties Electrical properties |
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