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Solution-processed p-doped hole-transport layer and its application in organic light-emitting diodes |
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| Authors: | Xinwen Zhang Dawei Wang Runlin He |
| Institution: | a Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, PR China b School of Science, Xi’an Jiaotong University, Xi’an 710049, PR China c Firefly Lighting Co., Ltd., Xiamen 361010, PR China |
| Abstract: | We investigate p-type doping poly(9-vinylcarbazole) (PVK) hole-transport layer (HTL) with tetrafluoro-tetracyano-quinodimethane introduced via cosolution. We found that the performances of devices with doped HTLs are significantly improved. The efficiency and lifetime of the p-doped device are 2.3 and 3.7 times as large as that of the control device with pure PVK as a HTL. Furthermore, the turn-on voltage of the device is reduced from 9.5 to 3.6 V by using a p-doped HTL. These improved properties are attributed to the formation of the charge-transfer complex in the HTL, which increases hole injection and conductivity of p-doped films considerably. |
| Keywords: | Organic light-emitting diodes Solution-processed p-Doped hole-transport layer Stability |
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