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Nanoscratch behavior of Zn1−xCdxSe heteroepitaxial layers
Authors:Chien-Huang Tsai
Institution:Department of Automation Engineering, Nan Kai Institute of Technology, Nantou 54243, Taiwan, ROC
Abstract:This paper describes the nanoscratch behavior of Zn1−xCdxSe epilayers grown using molecular beam epitaxy (MBE). Transmission electron microscopy (TEM), scanning electron microscopy (SEM), and Hysitron Triboscope nanoindenter techniques were employed to determine the microstructures, morphologies, friction coefficients (μ), and hardnesses (H) of these materials, and thereby propose an explanation for their properties in terms of nanotribological behavior. Nanoscratch analysis revealed that the coefficient of friction of the Zn1−xCdxSe epilayer system decreased from 0.172 to 0.139 upon increasing the Cd content (x) from 0.07 to 0.34. Furthermore, studies of the scratch wear depth under a ramping load indicated that a higher Cd content provided the Zn1−xCdxSe epilayers with a higher shear resistance, which enhanced the strength of the CdSe bonds. These findings suggest that the greater stiffness of the CdSe bond, relative to that of the ZnSe bond, enhances the hardness of the epilayers. Indeed, the effect of the Cd content on the growth of the Zn1−xCdxSe epilayers is manifested in the resulting nanotribological behavior.
Keywords:Molecular beam epitaxy  Scanning electron microscopy  Transmission electron microscopy
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