Exited State Absorption Upconversion Induced by Structural Defects for Photocatalysis with a Breakthrough Efficiency |
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| Authors: | Xiaodong Zhao Qian Liu Prof Xiaolei Li Dr Hui Li Prof Zhurui Shen Prof Huiming Ji Prof Tianyi Ma |
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| Institution: | 1. Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, 300072 Tianjin, P. R. China;2. School of Science, RMIT University, 3000 Melbourne, Victoria, Australia;3. School of Materials Science and Engineering, Nankai University, 300350 Tianjin, P. R. China |
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| Abstract: | The nitrogen-deficient graphitic carbon nitride (g-C3N4) has been prepared, a new excited state absorption (ESA) up-conversion mode is discovered, which is directly induced by structural defects, showing distinct chemical characteristics from those based on lanthanide ions and triplet states chromophores. The abundant N2C vacancies in g-C3N4 nanosheets work as the crucial intermediate excitation states, which lead to g-C3N4 upconverted emitting at the wavelength of 436 nm excited by the light with the wavelength of 800 nm. This process is proven to proceed via a two-photon involved ESA mode with a breakthrough quantum efficiency of 0.64 %. Further, we combine N2C vacancies enriched g-C3N4 with In2S3 and CdS, and successfully achieved an infrared light driven photocatalytic reactions. These findings offered a new family of up-conversion materials; more semiconductors with various structural defects are potential complementary members. |
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| Keywords: | Defects Excited State Absorption Graphitic Carbon Nitride Photocatalysis Up-Conversion |
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