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Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface** |
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| Authors: | Emily V. S. Hofmann Taylor J. Z. Stock Oliver Warschkow Rebecca Conybeare Neil J. Curson Steven R. Schofield |
| Affiliation: | 1. London Centre for Nanotechnology, University College London, London, WC1H 0AH UK;2. London Centre for Nanotechnology, University College London, London, WC1H 0AH UK Department of Electronic and Electrical Engineering, University College London, London, WC1E 6BT UK;3. London Centre for Nanotechnology, University College London, London, WC1H 0AH UK Department of Physics and Astronomy, University College London, London, WC1E 6BT UK |
| Abstract: | Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focused on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH3) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic-scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale-up to large numbers of deterministically placed qubits. |
| Keywords: | Atomic-Manipulation Donor Precursor Semiconductor Stm |