Optical Nonlinearity of Emerging ZrS2 and HfS2 Semiconductors |
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| Authors: | Chunhui Lu Yanqing Ge Mingwei Luo Xinlong Xu |
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| Affiliation: | Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics and Photon-Technology, School of Physics, Northwest University, Xi'an, 710069 China |
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| Abstract: | Compatible with existing processing technology, chemical vapor deposition method is used to synthesize ZrS2 and HfS2 films a a large scale. The nonlinear optical properties are characterized by Z-scan measurement with femtosecond pulses at 800 nm. The results show that saturable absorption happens in ZrS2 owing to the larger ground state absorption than the excited state absorption, while reverse saturable absorption appears in HfS2 due to the two-photon absorption. The figure of merit values of ZrS2 (≈4.30 ± 0.12 × 10−15 esu cm) and HfS2 (≈6.0 ± 1.4 × 10−15 esu cm) are much larger than those of MoS2 and graphene in ultrafast nonlinear optical performance at the wavelength of 800 nm. |
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| Keywords: | chemical vapor deposition reverse saturable absorption two-photon absorption ZrS2 and HfS2 saturable absorption |
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