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Formation mechanism of the di-vacancy in FCC metal Pt
Authors:Jian-Min Zhang  Yan-Ni Wen  Ke-Wei Xu
Institution:a College of Physics and Information Technology, Shaanxi Normal University, Xian 710062, Shaanxi, PR China
b Ankang University, Ankang 725000, Shannxi, PR China
c State Key Laboratory for Mechanical Behavior of Materials, Xian Jiaotong University, Xian 710049, Shaanxi, PR China
d ICMMO/LEMHE UMR CNRS 8182, Université Paris-Sud 11, 91405 Orsay Cedex, France
Abstract:The formation mechanism of the di-vacancy in FCC metal Pt has been studied from the migration of the two vacancies by using the modified analytical embedded atom method (MAEAM). The lattice relaxation resulted from the existence of the vacancies is performed with the molecular dynamics (MD) method. For migration of an isolated vacancy in Pt, the favorable path is the first-nearest-neighbor (1NN) migration. From the minimum formation energy or the maximum binding energy of the di-vacancy, we know that the 1NN configuration of the di-vacancy is the most stable. Up to the fifth-nearest-neighbor (5NN) configuration of the di-vacancy, the migration of the two vacancies is always to approach each other in the shortest paths of 5NN→2NN→1NN, 4NN→1NN, 3NN→1NN and 2NN→1NN.
Keywords:A  Metals  B  Epitaxial growth  D  Defects  D  Diffusion
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