| Abstract: | Relations for the effective drift mobility, the Hall coefficient, and the Hall mobility in p-type group IV and III–V compounds are derived accounting for the degenerate valence band structure and acting scattering mechanisms. Improved deformation potentials are determined for holes in p-type GaAs. Zn-doped and Ge-doped p-type GaAs samples with hole concentrations in the range from 4 · 1017 to about 1020 cm−3 were analysed with regard to the temperature dependence of the Hall mobility, and it was found that the Brooks-Herring formula is inadequate to describe ionized impurity scattering in p-type GaAs. |
