Untersuchungen zur heteroepitaktischen Abscheidung von GaP auf GaAs aus der Sn-Lösung

The used liquid-phase epitaxy apparates are described and the experimental conditions of growth on GaP and Ga(AsP) onto GaAs-substrates are reported. The influence of growing conditions (temperature, cooling rate, composition of melt) on the quality of interface and on the inlusion of solvent are discussed. The consequence of varying degrees of substrat-misorientation on the surface morphology has been studied.