Beitrag zur Verteilung der Hauptkomponenten bei der Darstellung von AIIBIVC2V-verbindungen mittels Gasphasentransports,dargestellt am Beispiel von ZnSiP2

Results obtained in preparing ZnSiP₂ by means of gas phase transport have indicated so far that concentration profiles of the main components exist in the crystallization zone. The crystalline deposit grown by use of ⁶⁵Zn was analyzed radiometrically and metallographically. Concentration differences between the crystals were found to exist and determined as a function of the place of crystallization, and the zinc content in the direction of the crystal centre was measured. An increasing zinc concentration towards the end of the ampoule and in the direction of the crystal centre was found to be typical. The presence of binary phases was established. Attempts were made to equalize concentrations by subsequent thermal treatment and multiple transport, and different results were obtained.