| Abstract: | The utilization of liquid-phase epitaxy for growing thin yttrium-aluminium garnet films is discussed. By transfer method from lead solvents films were obtained with a composition Y3Al5O12: Nd3+ on substrates with composition Y3Al5O12, and films Y3Al5O12: Er3+, Y3Al5O12: Er3+, Ga3+ (about 40 wt% of erbium) on substrates Y3Al5O12: Nd3+ Characteristics are given for simultaneous induced emission generation of the system film-substrate at 77 K Er3+ ion (λgen = 1.6602 μ) being a component of the film, and Nd3+ ion, being a component of the substrate (λgen = 1.061 μm). The results obtained are discussed. |
