TSM-gewachsene Halbleiter-Einkristalle aus (Pb0,8Sn0,2)Te

By means of the Travelling Solvent Method (TSM) the authors succeeded in growing PbSnTe solid solution crystals using a simple working growing principle. Imperfections and constitution as well as electrical properties of the crystals have been investigated. The results lead to the conclusion that one can grow homogeneous, nearly perfect crystals having low carrier densities and high carrier mobilities in a relatively short time which seems to be the main advantage of the experimental techniques used. Representative values of electrical crystal parameters are p₇₇ ≦ 10¹⁷ cm⁻³, n₇₇ ≦ 10¹⁷ cm⁻³; pμ₇₇ ⋍ 1,6 × × 10⁴cm²/Vs; dimensions: 1 × 4 × 4 mm³.