Impact of substrate bias on radiation-induced edge effects in MOSFETs |
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Authors: | Hu Zhi-Yuan Liu Zhang-Li Shao-Hu Zhang Zheng-Xuan Ning Bing-Xu Chen Ming Bi Da-Wei and Zou Shi-Chang |
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Institution: | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
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Abstract: | This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation (STI) leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias. Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics. |
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Keywords: | ionizing radiation shallow trench isolation trapped charge total dose effects |
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