Institution: | a Faculty of Computer and Communication Engineering, Taegu University, 15 Naeri, Jinryang, Kyungsan, Kyungbuk 712-714, South Korea b Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan |
Abstract: | Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)√3×√3-Sn and hydrogen-terminated Si(1 1 1) surfaces at room temperature. Sn formed crystalline film with β-Sn structure on Si(1 1 1)√3×√3-Sn surface, but on the hydrogen-terminated Si(1 1 1) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(1 1 1)√3×√3-Sn surface was found to be . In the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film. |