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Influence of interface structures on Sn thin film growth on Si(1 1 1) surface |
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| Authors: | J T Ryu T Fujino M Katayama Y B Kim and K Oura |
| Institution: | a Faculty of Computer and Communication Engineering, Taegu University, 15 Naeri, Jinryang, Kyungsan, Kyungbuk 712-714, South Korea b Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan |
| Abstract: | Using coaxial impact collision ion scattering spectroscopy, we have investigated Sn thin film growth on Si(1 1 1)√3×√3-Sn and hydrogen-terminated Si(1 1 1) surfaces at room temperature. Sn formed crystalline film with β-Sn structure on Si(1 1 1)√3×√3-Sn surface, but on the hydrogen-terminated Si(1 1 1) surface, the epitaxial growth of Sn thin film was disrupted, and Sn grew as a polycrystalline film. The growth orientational relationship of the Sn film grown on Si(1 1 1)√3×√3-Sn surface was found to be . In the works, we found that interface structure plays a decisive role for the growth mode, crystallinity, and growth orientation of the growth of thin film. |
| Keywords: | Epitaxial growth Interface Hydrogen termination Sn Ion scattering spectroscopy Si(1 1 1) CAICISS √3×√3-Sn structure |
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