| Cr-AlN界面的二次离子质谱研究 |
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| 引用本文： | 岳瑞峰,王佑祥,陈春华. Cr-AlN界面的二次离子质谱研究[J]. 分析测试学报, 1999, 18(3) |
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| 作者姓名： | 岳瑞峰 王佑祥 陈春华 |
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| 作者单位： | 1. 清华大学微电子学研究所,北京,100084
2. 中国科学院表面物理国家重点实验室,北京,100080 |
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| 摘 要： | 采用电子束蒸发的方法在２００℃抛光的氮化铝（ＡｌＮ）陶瓷衬底上淀积２００ｎｍ的Ｃｒ膜，并在高真空中退火。利用ＭＣｓ＋－ＳＩＭＳ技术（在Ｃｓ＋一次离子轰击下检测ＭＣｓ＋型二次离子）对样品进行了深度剖析，给出了界面组分分布随退火温度与时间的变化关系。结果表明，ＭＣｓ＋－ＳＩＭＳ技术是研究金属－陶瓷界面扩散与反应的有效方法。
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| 关 键 词： | 铬 氮化铝 界面 二次离子质谱 |
SIMS Analysis of the Cr-AlN Interface |
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| Yue Ruifeng,Wang Youxiang,Chen Chunhua. SIMS Analysis of the Cr-AlN Interface[J]. Journal of Instrumental Analysis, 1999, 18(3) |
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| Authors: | Yue Ruifeng Wang Youxiang Chen Chunhua |
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| Abstract: | A 200 nm Cr film was deposited on a polished AlN ceramic substrate at 200 by electron beam evaporation. Depth profile was studied using MCs _ SIMS technique (detection of MCs secondary ion under Cs primary ion bombardment) after the samples were annealed in high vacuum. The variation of interface composition with annealing temperature and time is given. The results show that MCs SIMS technique is an effective method to analyze the interfacial diffusion and reaction between metal and ceramics. |
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| Keywords: | Cr AlN Interface Secondary ion mass spectrometry |
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