电子束蒸镀氧化铟透明导电薄膜

用电子束蒸发掺SnO2氧化铟靶,可以制得性能良好的透明导电薄膜,电阻率在2.5-3.5×10-4Ωcm,可见光透过率达90%.这种导电薄膜能代替SnO2透明导电薄膜,并优于SnO2导电薄膜. 本文着重研究了影响氧化铟透明导电薄膜导电性、透光性的主要因素,为获得性能良好的透明导电薄膜提供了重复性较好的工艺条件.]

TRANSPARENT CONDUCTIVE In2O3 THIN FILMS BY ELECTRON-BEAM EVAPORATION

Transparent conductive thin films with excellent performance have been fabricated by the electron-beam evaporation of In2O3doped with SnO2.The resistivity of these films ranges from 2.5×10-4 to 3.5×10-4Ω-cm. Its transparency is as high as 90% to the visual light. This kind of In2O3 films could replace the SnO2 films, serving as the transparent conductive layers. The main factors affecting the conductivity and transparency of In2O3 films are discussed in this paper, The technological conditions to obtain the films with good quality and reproducibility are also provided.