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Preparation and Electric Property of Polysilsesquioxane Thin Films Incorporating Carbazole Groups |
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| Authors: | Dr. Seiji Watase Daiki Fujisaki Dr. Mitsuru Watanabe Dr. Koji Mitamura Dr. Noboru Nishioka Dr. Kimihiro Matsukawa |
| Affiliation: | 1. Electronic Materials Division Osaka Municipal Technical Research Institute 1‐6‐50 Morinomiya, Joto‐ku, 538‐8553 Osaka (Japan), Fax: (+81)?6‐6963‐8040;2. Department of Applied Chemistry, Faculty of Engineering, Osaka Electro‐communication University 18‐8 Hatsu‐cho, Neyagawa‐shi, 572‐8530 Osaka (Japan) |
| Abstract: | New silsesquioxane incorporating a carbazole groups (PCTSQ) has been synthesized by a click thiol–ene reaction and a subsequent sol–gel reaction. To evaluate the electric property of this hybrid, diode devices have been fabricated by using PCTSQ thin film by spin‐coating onto n‐type ZnO film prepared by the electrodeposition method. The thin film hybrid devices showed good electric characteristics and high rectification ratio, as well as worked as a rectifier. |
| Keywords: | carbazole groups semiconductors silicon sol– gel processes thiol– enes |