退火对Er3+离子注入ZnSe晶体电致发光的影响

本文研究了低阻ZnSe晶体在室温下经Er3+离子注入后,退火对它的电学及电致发光性能的影响。文中指出,经N2气保护退火所制备的ZnSe:Er3+二极管具有MIS结构,I层是由于晶格损伤造成的。文中根据对I层起因的分析,首次提出和实现了在熔融锌中退火可使品格损伤墓本消除,从而制备了掺Er的ZnSeMS二极管,在反向电压下得到Er3+离子的特征发光。

THE EFFECT OF ANNEALING ON THE ELECTROLUMINESCENCE OF Er3+-IMPLANTED ZnSe CRYSTALS

Implantation of rare-earth ion into ZnS and ZnSe has been used for fabrication of LEDs with MS structure.The implantation processes were carried out by using an ion beam energy of 20keV and with the substrate at 77K.In the present experiments, erbium ions were implanted into ZnSe with the substrate at 300K.After annealing the ZnSe:Er3+ crystal in N2 atmosphere, ZnSe:Er3+ LED with MIS structure was fabricated.According to the reason of I layer forming, we first proposed that the I layer could be eliminated by annealing Er3+-implanted ZnSe crystals in melten zinc and the LED with MS structure could be fabricated.ZnSe crystals were grown from the vapour phase in sealed capsules con-tainting slight excess of zinc in our laboratory.Dice with dimensions of 6×6×1mm3 were annealed in melten zinc to reduce their resistivities to the range of 1-10Ω·cm.Erbium ions with energy of 100keV and dose of 1×1015cm-2 were implanted into ZnSe substrate at room temperature.Annealing was performed in N2 atmosphere or in melten zinc, respectively.