| AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响 |
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| 引用本文： | 孔月婵,郑有炓,储荣明,顾书林. AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响[J]. 物理学报, 2003, 52(7): 1756-1760 |
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| 作者姓名： | 孔月婵 郑有炓 储荣明 顾书林 |
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| 作者单位： | 南京大学物理系，南京 210093 |
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| 基金项目： | 国家自然科学基金(批准号：60136020)和国家重点基础研究专项基金(批准号：G20000683) 资助的课题. |
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| 摘 要： | 通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对AlxGa1-xN/GaN异质结构二维电子气性质的影响，给出了AlxGa1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能关键词：xGa1-xN/GaN异质结构')" href="#">AlxGa1-xN/GaN异质结构二维电子气自发极化压电极化
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| 关 键 词： | AlxGa1-xN/GaN异质结构 二维电子气 自发极化 压电极化 |
| 收稿时间： | 2002-08-12 |
| 修稿时间： | 2002-08-12 |
Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures |
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| Kong Yue-Chan,Zheng You-Dou,Chu Rong-Ming and Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures[J]. Acta Physica Sinica, 2003, 52(7): 1756-1760 |
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| Authors: | Kong Yue-Chan Zheng You-Dou Chu Rong-Ming Gu Shu-Lin |
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| Abstract: | By self-consistently sovling the coupled Schrdinger and Poisson equations, we have investingated the property of the two-dimensional electron gases (2DEG) in AlxGa1-xN/GaN heterostructures. We demonstrate the depen dence of the density, the distribution, and the subband occupation of the 2DEG on the Al-content of the AlGaN barrier. Band offset and mechanism of spontaneous and piezoelectric polarization were concerned to discuss our results. |
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| Keywords: | AlxGa1-xN/GaN heterostructures two-dimensiona l electron gases spontaneous polarization piezoelectric polarization |
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