退火处理对磁控溅射制备LaCoO_3薄膜性能的影响

采用磁控溅射法在硅衬底上制备了LaCoO_3(LCO)薄膜,研究了退火温度对LCO薄膜组织结构、表面形貌及热电特性的影响,并利用X射线衍射仪、原子力显微镜(AFM)、激光导热仪等对LCO薄膜的晶体结构、表面形貌、热扩散系数等进行测量与表征.结果表明:退火温度对LCO薄膜的结晶度、晶粒尺寸和薄膜表面形貌都有较大影响;退火前后LCO薄膜的热扩散系数都随温度的升高而减小,且变化速率逐渐减缓; LCO薄膜的热扩散系数随退化温度的升高先增大后减小.LCO薄膜经过700℃退火后得到最佳的综合性能,其薄膜表面致密、平整,结晶质量最好,热扩散系数最小,热电性能最好.

Influence of annealing treatment on properties of LaCoO3 thin films deposited by RF magnetron sputtering

Effects of annealing temperature on microstructure, surface morphology and thermoelectric properties of LaCoO3 (LCO) thin films prepared by magnetron sputtering system on Si substrate were studied. The crystal structure, surface morphology and thermal diffusion coefficient of the LCO thin films were measured and characterized by the use of X-ray diffraction(XRD), atomic force microscopy(AFM) and laser thermal conductivity meter(LFA). The results show that the annealing temperature has a great effect on the degree of crystallinity, crystalline grain dimension and thermal face coefficient of LCO thin film. Before and after annealing, the thermal diffusion coefficient of LCO thin films decreases with the increase of temperature, and the rate of change gradually slows down; The thermal diffusion coefficient of LCO thin film increases first and then decreases with the increase of annealing temperature. After annealing at 700 degrees, LCO thin film has the best comprehensive capacity and its film surface is dense, smooth. And also, the crystallization and thermoelectric properties are the best and the thermal diffusion coefficient is the minimum.