Optimum design of InGaP/GaAs dual-junction solar cells with different tunnel diodes

We design the InGaP/GaAs dual-junction (DJ) solar cells by optimizing short-circuit current matching between top and bottom cells using the Silvaco ATLAS. The relatively thicker base layer of top cell exhibits a larger short-circuit current density (J _sc) while the thicker base layer of bottom cell allows for a smaller J _sc. The matched J _sc of 10.61±0.05 and 13.25±0.06 mA/cm ² under AM1.5G and AM0 illuminations, respectively, are obtained, leading to the increased conversion efficiency. The base thicknesses of top InGaP cells are optimized at 0.8 and 0.65 μm for AM1.5G and AM0 illuminations, respectively, and the base thicknesses of bottom GaAs cells are optimized at 2 μm. For the optimized solar cell structure, the maximum J _sc = 10.66 mA/cm ² (13.31 mA/cm ²), V _oc =  2.34 V (2.35 V), and fill factor =  87.84% (88.1%) are obtained under AM1.5G (AM0) illumination, exhibiting a maximum conversion efficiency of 25.78% (23.96%). The effect of tunnel diode structure, i.e, GaAs/GaAs, AlGaAs/AlGaAs, and InGaP/InGaP, on the characteristics of solar cells is investigated. The photogeneration rate in the DJ solar cell structure is also obtained by incident light of different wavelengths.