On the distribution coefficient of sulphur during the crystallization of GaP from nonstoichiometric gallium melts

GaP grown by the SSD technique was doped by sulphur in a wide concentration range. Using chemical, electrical and radiochemical methods the concentration and temperature dependence of the distribution coefficient k during this crystallization from the nonstoichiometric melt was determined. With the crystallization temperature at 1000°C for k a value 6.9 ± 1.4 was found independent on the sulphur quantity added. The distribution coefficient decreases clearly with increasing temperature.