Preparation and characterization of several II-IV-V2 chalcopyrite single crystals |
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| Affiliation: | 1. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China;2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, China;3. Huazhong University of Science and Technology, Research Institute in Shenzhen, China;1. State Key Laboratory of Lake Science and Environment, Nanjing Institute of Geography and Limnology, Chinese Academy of Sciences, Nanjing 210008, China;2. Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 20104, China;3. College of Materials Science and Engineering, Nanjing Forestry University, Nanjing 210037, China;1. School of Electronic and Information, Qingdao University, Qingdao 266071, China;2. School of Physics, Qingdao University, Qingdao 266071, China;3. College of Physics and Electronic Information, Dezhou University, China |
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| Abstract: | Single crystals of ZnSiP2, ZnGeP2, ZnGeP1.8As0.2, and ZnGeP1.6As0.4 have been grown by several techniques and their electronic and optical properties were compared. For ZnSiP2 there are marked absorption bands at 10 and 11.5 μm, and at 13 μm for ZnGeP2. Upon substitution of 10 mole% of arsenic for phosphorus, the latter band does not shift to higher wavelengths. Further substitution of arsenic for phosphorus in ZnGeP2 showed a weak second band at 9.8 μm. |
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