| Abstract: | The capacitance-voltage characteristics have been studied for both AC and DC fields of Al/Cerium Oxide/Al thin film capacitor structures. Compared to DC fields, these structures can withstand higher AC fields. Capacitance increases with increase in AC and DC fields. The former behaviour is explained on the basis of presence of oxygen vacancies and the latter one is attributed for the Joule heating phenomena. The presence of oxygen vacancies were confirmed from the thermoluminescence studies on these films. |
