High-pressure synthesis and electrical properties of Mn3Ge5 with Mn11Si19-type structure |
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| Affiliation: | 1. Department of Physics, University of Florida, Gainesville FL, 32611, USA;2. National High Magnetic Field Laboratory, University of Florida, Gainesville, FL 32611-8440, USA |
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| Abstract: | The new germanium-rich manganese germanide, Mn3Ge5, was synthesized at 600–1000°C and 4 GPa using a Belt-type apparatus. The crystal structure of Mn3Ge5 was identified as possessing the Mn11Si19 type with a tetragonal cell (Schoenflies symbolD2d). The electrical resistivity of Mn3Ge5 increased with increasing temperature and saturated above 200 K. The thermoelectric power was 50–70 μV/K and its sign was positive. These data indicated that Mn3Ge5 was ap-type semiconductor or a semimetal. |
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