| Abstract: | The main quantitative characteristics of asymmetry of isolated dislocation mobility in Si single crystals manifested in an essential difference (up to an order of magnitude) of the velocities of broadening and narrowing dislocation half-loops have been investigated. Transition from broadening to narrowing of the dislocation half-loop is found to result in the nonmonotonic temperature dependence of the 60° segments velocities as well as in changing the stress dependence of the velocity. The high temperature annealing of the sample befor the reversal of the dislocation glide is found to cause the asymmetry disappearance. The analysis of the results obtained is performed. It is concluded that the phenomenon observed may be due to a rearrangement of the point defect structure during the course of the dislocation glide. |
