Stimulated Raman scattering of an extraordinary mode in a solid state plasma

This paper presents an investigation of stimulated Raman scattering of an extraordinary mode in a solid state plasma, n In Sb. As the pump wave (w₀, k₀) propagates in the semiconductor the electrons acquire an oscillatory drift velocity and the magnetic field of the pump interacts with a low frequency perturbation (w_l, k_l) to give rise to high frequency side bands (w_l ± w₀, k_l ± k₀). The side band (w_l − w₀, k_l − k₀) interacts with the pump to produce a low frequency ponderomotive force responsible for driving the original density perturbation. The expressions for the growth rate and threshold for the instability have been obtained. For typical plasma parameters of n In Sb and laser radiation of frequency 1.778 × 10¹⁴s⁻¹, the growth rate turns out to be ~ 10¹¹s⁻¹ for the scattering angle θ = 0°. The growth rate is found to reduce with increasing values of scattering angle. A magnetic field enhances the growth rate and tends to reduce the threshold for the instability. The present investigation may be used to obtain useful information about the nature of elementary excitations in solid state plasmas, and the estimate of the growth rate may help in diagnostics and in the characterization of semiconductors.