Photoelectrochemical characterization of several semiconducting compounds of palladium with sulfur and/or phosphorus |
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| Affiliation: | 1. Department of Engineering Science, Faculty of Informatics and Engineering, The University of Electro-Communications, Chofu, Tokyo 182-8585, Japan;2. Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Kitakyushu 808-0196, Japan;3. CREST, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan |
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| Abstract: | Semiconducting compounds of palladium with sulfur and/or phosphorus were prepared as crystals and their semiconducting and photoelectrochemical properties studied. The compounds include PdS, PdPS, Pd3(PS4)2, and PdP2 and crystal growth was accomplished by chemical vapor transport with halogens and Bridgeman methods. Photoelectrochemical techniques were used to measure bandgap, transition type, doping level, majority carrier type, flatband potential, quantum yield for electron flow, and stability in a photoelectrochemical cell. The previously undetermined bandgap of PdP2 is reported (1.08 eV, indirect). |
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