Studies of impure cadmium oxide semiconductors using NMR,EPR and conductivity measurements |
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| Institution: | 1. Institute of Research and Development, Duy Tan University, 03 Quang Trung, Danang, Viet Nam;2. Lehrstuhl für Theoretische Physik I, Technische Universität Dortmund, Otto-Hahn Straße 4, 44221, Dortmund, Germany;1. GTM – Grup de recerca en Tecnologies Mèdia, La Salle – URL, c/Quatre Camins, 30, 08022 Barcelona, Spain;2. Department of Earth and Environmental Sciences (DISAT), Universitá degli Studi di Milano Bicocca, Piazza della Scienza 1, 20126 Milano, Italy;1. Department of Biomedical Science and Center for Bio-Nanomaterials, Daegu University, Gyeongsan 38453, South Korea;2. Department of Biological Sciences and Biotechnology, Hannam University, Daejeon 34054, South Korea;1. Universidade Estadual Paulista (UNESP), Instituto de Biociências, Departamento de Genética, Botucatu, SP, Brazil;2. Universidade Estadual Paulista (UNESP), Instituto de Biociências, Departamento de Física e Biofísica, Botucatu, SP, Brazil;1. Genomic Sciences Program, Universidad Autónoma de la Ciudad de México, San Lorenzo 290, Colonia Del Valle, Delegación Benito Juárez, CP 03100, Ciudad de México, Mexico;2. School of Medicine, Universidad Nacional Autónoma de México, Av Universidad 3000, Coyoacán, Copilco Universidad, 04510 Ciudad de México, Mexico;3. School of Veterinary Medicine and Zootechnics, Universidad Nacional Autónoma de México, Circuito Escolar S/N, Coyoacán, Copilco Universidad, 04510 Ciudad de México, Mexico;4. Experimental Pathology Department, National Institute of Medical Sciences and Nutrition Salvador Zubirán (INCMNSZ), Av. Vasco de Quiroga 15, Tlalpan, Belisario Domínguez Sección XVI, 14080 Ciudad de México, Mexico;1. University of Belgrade, Vinča Institute of Nuclear Sciences, P.O. Box 522, 11001 Belgrade, Serbia;2. South Dakota School of Mines & Technology, Rapid City, SD, USA |
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| Abstract: | Cadmium oxide semiconductors were prepared by heating CdO which also contained hydroxide and carbonate species formed on storage. Reaction of the impurities on heating, and high temperature annealing, produced an unusually wide range of electrical conductivities, EPR spectra and NMR spectra. Changes in EPR spectra were correlated with the 113Cd shift, which was shown to be proportional to the square root of the relaxation rate, and also proportional to the line width. This allowed the Knight shift contribution to the resonance position to be separated from the paramagnetic shielding (due to covalency). The latter was found to be 234 ± 6 ppm relative to Cd(H2O)2+6. It could then be shown that the Korringa relationship (for degenerate electrons) was satisfied, with T1TK2 = 3.9 ± 0.2 × 10−6 sK. The variations of the asymmetric line shape with Knight shift were examined in the light of various models for impurity semiconductors. |
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